Model: NTD3055L170T4G-VB.
Silk screen: VBE1695.
Brand: VBsemi.
Parameters: .
- Type: N channel.
- Maximum withstand voltage: 60V.
- Maximum current: 18A.
- Static turn-on resistance (RDS(ON)): 73mΩ @ 10V, 85mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Threshold voltage (Vth): 2V.
- Package type: TO252.
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Application introduction: .
NTD3055L170T4G-VB is an N-channel MOSFET suitable for a variety of electronic applications, as follows are some possible application areas: .
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1. Power module: This MOSFET can be used in power switches in power modules to help improve the efficiency of power management and is suitable for portable devices, embedded systems and power inverters. converter. .
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2. DC-DC converter: NTD3055L170T4G-VB can be used in DC-DC converter to convert one voltage into another voltage, suitable for battery-driven equipment, electronic terminals and communication equipment . .
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3. Battery management: It can also be used in the battery management system to control the charging and discharging of the battery to ensure the safety and performance of the battery. .
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4. Motor drive: NTD3055L170T4G-VB can be used in motor drive circuits, such as motor controllers and power tools, to achieve efficient motor operation. .
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5. Automotive electronics: Due to its high current carrying capacity and low on-resistance, this MOSFET is also suitable for automotive electronic systems such as vehicle power management and drive control. .
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The characteristics of NTD3055L170T4G-VB make it suitable for a variety of medium power electronic applications, especially where high current handling capability and low on-resistance are required. However, when selecting and using this device, a detailed understanding of its data sheet and performance parameters is still required to ensure that it meets the requirements of a specific application. .