Model: NTD4860NT4G-VB.
Silk screen: VBE1307.
Brand: VBsemi.
Package: TO252.
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**Detailed parameter description:**.
- Architecture: N -Channel MOSFET.
- Voltage level: 30V.
- Current capability: 60A.
- RDS(ON): 10mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth) : 1.6V.
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**Application introduction:**.
NTD4860NT4G-VB is a TO252 packaged N-Channel MOSFET, suitable for high current and low on-resistance in various fields Circuit design. The following are the possible application areas and modules of this device: .
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1. **Power module:** Suitable for high-power power modules, such as power amplifiers and power inverters. .
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2. **Motor Control:** Can be used for high-power motor drives, such as power tools and electric vehicles. .
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3. **Power switch:** Can play a role in power switch modules that require high current and low on-resistance. .
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4. **Power amplifier:** Suitable for the output stage of high-power amplifier to improve the efficiency of the power amplifier. .
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**Usage Precautions:**.
- When designing a circuit, make sure to understand and follow the maximum rated voltage and current of the device to prevent damage to the device. .
- Due to the high power characteristics, appropriate heat dissipation measures need to be considered to ensure that the device is within the normal operating temperature range. .
- Pay attention to the threshold voltage to ensure that the required current and voltage conditions are met in the actual application.