Model: NID6002NT4G-VB.
Silk screen: VBE1695.
Brand: VBsemi.
Parameter description: .
- Polarity: N channel.
- Rated voltage: 60V.
- Maximum continuous drain current: 18A.
- Static drain-source resistance (RDS(ON)): 73mΩ @ 10V, 85mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): 2V.
- Package: TO252.
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Application introduction: .
NID6002NT4G-VB is an N Channel field effect transistor (MOSFET) devices with moderate current handling capabilities and low drain-source resistance suitable for a variety of electronic applications. .
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Application fields: .
1. **Power module**: NID6002NT4G-VB is suitable for switching power supply, power management module and battery protection circuit, which helps to improve the power conversion efficiency, especially suitable for for low voltage power management. .
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2. **Motor Drive**: The moderate current handling capability and low resistance of this MOSFET device make it ideal for use in motor drives, motor control and motor protection, and can be used in a variety of motor applications . .
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3. **Battery Management**: In electric vehicles, power tools and portable equipment, NID6002NT4G-VB can be used in battery management systems to ensure safe charging, discharging and protection of batteries, especially when low voltage applications. .
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4. **Power switch**: This MOSFET can be used in low voltage and low current switching circuits, such as power switches and power inverters. .
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5. **Portable Devices**: NID6002NT4G-VB can be used for power management, signal switching and battery management of portable devices, such as smartphones, tablets and portable electronic devices. .
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In short, NID6002NT4G-VB is a versatile electronic device suitable for various electronic applications requiring moderate current carrying capacity, low resistance and reliability. It can be used in modules such as power management, motor control, battery protection, power switches, portable devices, etc.