Model: NDT456P-VB. Silkscreen: VBJ2456. Brand: VBsemi. Parameters:. - Type: P-channel. - Rated voltage (Vds): -40V. - Maximum continuous current (Id): -6A. - On-resistance (RDS(ON)): 42mΩ @ 10V, 49mΩ @ 4.5V. - Gate-source voltage range (Vgs): 20V (positive and negative). - Threshold voltage (Vth): -0.83V. - Package: SOT223. . Application Introduction:. NDT456P-VB is a P-channel field effect transistor (MOSFET) suitable for electronic applications that require negative voltage operation. It has low on-resistance and moderate current handling capability, suitable for a range of power control and switching applications. . . Detailed parameter description: . 1. **Type**: This is a P-channel MOSFET, which means that it turns on when a negative voltage is input. This type of MOSFET is usually used in circuits that require negative voltage operation. . . 2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is -40V. This means that under normal operating conditions, its voltage can be negative, but it should not exceed -40V. . . 3. **Maximum continuous current (Id)**: The maximum current handling capacity of this MOSFET is -6A. The negative sign indicates that the current flows from source to drain. . . 4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 42mΩ, and at 4.5V it is 49mΩ. Low on-resistance means it can generate less power dissipation in the on state. . . 5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of the MOSFET is 20V, which means that a voltage of up to 20V is required to control its on state. . . 6. **Threshold voltage (Vth)**: The threshold voltage of this MOSFET is -0.83V. This is the gate-source voltage that starts the MOSFET on. . . 7. **Package**: This MOSFET is packaged in SOT223, which is a small package suitable for small circuit boards and space-constrained applications. . . Application areas: . NDT456P-VB This MOSFET is suitable for a variety of electronic applications, especially those that require negative voltage operation, including but not limited to the following applications: . . 1. **Battery protection**: It can be used in battery protection circuits to ensure that the battery is not overcharged or over-discharged. . . 2. **Switching power supply**: Can be used for negative voltage switching power supply for voltage conversion and stabilization. . . 3. **Power switch**: Can be used for negative voltage power switch for power control of various electronic devices. . . 4. **Negative voltage circuit**: Can be used for various electronic circuits operated with negative voltage, such as current control, inverter and power management. . . In short, this P-channel MOSFET is suitable for electronic modules and devices that require negative voltage operation, providing the functions of power control and current management. .
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