Model: NCE6602-VB.
Silk screen: VB5222.
Brand: VBsemi.
Parameters:.
- N+P channel.
- Rated voltage: ±20V.
- Maximum current: 7A (forward) / 4.5A (reverse).
- On-state resistance (RDS(ON)): 20mΩ @ 4.5V (forward) / 70mΩ @ 2.5V (reverse).
- Threshold voltage (Vth): 0.71V (forward) / -0.81V (reverse).
- Package: SOT23-6.
.
Application introduction: .
NCE6602-VB It is an N+P channel MOSFET with a dual-channel design suitable for a variety of applications including power switching, current control and power management. .
.
Main features and application fields: .
1. **Power switch**: NCE6602-VB can be used in power switching applications, such as switching power supplies, DC-DC converters and switching regulators . Its dual-channel design allows simultaneous control of forward and reverse current flow. .
.
2. **Power Management**: In power management systems, this MOSFET can be used for power switching and control to help achieve efficient energy management. .
.
3. **Current Control**: NCE6602-VB is suitable for current control applications, including current sources, current controllers and current amplifiers. It allows forward and reverse current flow to be regulated and controlled. .
.
4. **Battery Protection**: In battery-powered systems, NCE6602-VB can be used in battery protection circuits to ensure safety and stability during battery charging and discharging. .
.
5. **Current Switch**: This MOSFET can be used in current switching applications such as current limiting and protection circuits. .
.
In short, NCE6602-VB is suitable for many fields, including modules such as power switch, power management, current control, battery protection and current switch. Its dual-channel design and suitability for both forward and reverse current flow make it ideal for a variety of circuit designs.