Model: NCE60P25K-VB.
Silkscreen: VBE2658.
Brand: VBsemi.
Parameter Description:.
- Channel type: P-channel.
- Rated voltage: -60V.
- Rated current: -22A.
- On-resistance: 48mΩ@10V, 57mΩ@4.5V.
- Threshold voltage: -1.5Vth(V).
- Package type: TO252.
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Application Introduction:.
NCE60P25K-VB is a power MOSFET with a P-channel structure. It has a negative rated voltage of -60V and a rated current of -22A, and is suitable for application scenarios where P-channel MOSFET needs to be controlled for power switching. The device has an on-resistance of 48mΩ at 10V and 57mΩ at 4.5V, providing low resistance and high efficiency. The threshold voltage is -1.5Vth(V), enabling precise control. .
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NCE60P25K-VB is commonly used in the following modules: .
1. Power management module: The device can be used in power management modules such as power switches, power inverters, and DC-DC converters to provide high-efficiency, low-resistance switch control. .
2. Motor drive module: The device can be used in motor drive circuits to control the start and stop of motors and achieve high-efficiency drive control. .
3. Lighting module: The device can be used in LED lighting drive circuits to adjust the brightness of LEDs and provide high-efficiency lighting control. .
4. Power inverter module: The device can be used in power inverter circuits to achieve conversion and transformation of electric energy and provide high-efficiency inverter control. .
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In short, NCE60P25K-VB is a P-channel MOSFET suitable for various power switching applications. It has the characteristics of low resistance, high efficiency and precise control. It is widely used in modules in power management, motor drive, lighting and power inverter fields. .