Model: NCE55P04S-VB.
Silk screen: VBA4658.
Brand: VBsemi.
Parameters: .
- Channel type: 2 P channels.
- Rated voltage: -60V.
- Maximum continuous current: -5.3A.
- Static turn-on resistance (RDS(ON)): 58mΩ @ 10V, 70mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (± V).
- Threshold voltage (Vth): -1V to -3V.
- Package type: SOP8.
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Application introduction: .
NCE55P04S-VB is a product with 2 A P-channel MOSFET suitable for electronic applications requiring high-performance power switching. The following are some possible application field modules: .
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1. **Power switch module**: This MOSFET can be used in power switch modules to achieve switching and regulation of efficient power supplies. It is suitable for portable devices, power management systems and low voltage power supply applications. .
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2. **Battery Protection Module**: In applications where the battery needs to be protected from over-discharge and overcharge, NCE55P04S-VB can be used in the battery protection circuit to ensure the safe operation of the battery. .
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3. **DC-DC converter**: In DC-DC converters that require high efficiency, this MOSFET can be used to help achieve voltage rise and fall and power conversion. It is suitable for portable devices, communication equipment and industrial applications. .
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4. **Motor drive module**: NCE55P04S-VB can be used for motor drive and control modules, including DC motor, stepper motor and brushless DC motor drive. .
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5. **Current Control Module**: In applications requiring high performance current control, this MOSFET can be used in current sensor and current amplifier modules. .
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NCE55P04S-VB has 2 P-channels and is suitable for applications that require simultaneous control of two P-channel MOSFETs to achieve high-performance power switching. In actual applications, it is important to adhere to the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.