Model: NCE4606-VB.
Silk screen: VBA5325.
Brand: VBsemi.
Parameters: .
- Type: N+P channel.
- Rated voltage (Vds): ±30V .
- Maximum continuous current (Id): 9A (N channel) / -6A (P channel).
- On resistance (RDS(ON)): 15mΩ @ 10V (N channel) / 42mΩ @ 10V (P channel).
- Gate-source voltage range (Vgs): 20V (positive and negative).
- Threshold voltage (Vth): ±1.65V.
- Package: SOP8.
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Application Introduction: .
NCE4606-VB is an N+P channel field effect transistor (MOSFET), including both N-channel and P-channel MOSFETs. It is suitable for electronic applications that require simultaneous control of positive and negative voltages, such as power switching and current control. .
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Detailed parameter description: .
1. **Type**: This is an N+P channel MOSFET, including both N-channel and P-channel MOSFETs. N-channel MOSFET is used for forward voltage operation, and P-channel MOSFET is used for negative voltage operation. .
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2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is ±30V. This means it can handle both positive and negative voltages. .
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3. **Maximum continuous current (Id)**: The maximum current carrying capacity of N-channel MOSFET is 9A, while that of P-channel MOSFET is -6A. This means that N-channel MOSFET can be used for forward current flow, while P-channel MOSFET can be used for negative flow current. .
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4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on-state, which affects the power consumption and efficiency of MOSFET. At a gate-source voltage of 10V, the RDS(ON) of the N-channel MOSFET is 15mΩ and the P-channel MOSFET is 42mΩ. Low on-resistance means it can produce less power dissipation in the on-state. .
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5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of MOSFET is 20V, which means that a voltage of up to 20V is required to control its conduction state. .
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6. **Threshold voltage (Vth)**: The threshold voltage of this MOSFET is ±1.65V. This is the gate-source voltage that turns the MOSFET on. .
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7. **Package**: This MOSFET is packaged in SOP8, which is a common packaging type and is suitable for a variety of circuit applications. .
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Application fields: .
NCE4606-VB This N+P channel MOSFET is suitable for a variety of electronic applications that require simultaneous control of positive and negative voltages, including but not limited to modules in the following fields ：.
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1. **Power switch**: Can be used in power switching circuits to control positive and negative voltages at the same time, such as voltage conversion and current control. .
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2. **Battery Management**: Used for battery charge and discharge management to ensure safe and efficient battery use. .
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3. **Current Control**: Can be used in current control circuits, such as motor control and current amplifier. .
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4. **Inverter**: Used in inverter circuits to convert DC power into AC power, such as solar inverters and power inverters. .
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In short, this N+P channel MOSFET is suitable for electronic modules and devices that need to handle both positive and negative voltages, providing power control and current management functions. They are particularly suitable for applications where bidirectional current flow needs to be controlled. .