Model: MMBF170-VB.
Silk screen: VB162K.
Brand: VBsemi.
Parameters: N channel, 60V, 0.3A, RDS(ON) 2800mΩ @ 10V, 3000mΩ @ 4.5V, 20Vgs (± V); 1.6Vth (V).
Package: SOT23.
.
Detailed parameter description and application introduction:.
1. Channel type: N channel.
- This means This is an N-channel MOSFET commonly used in electronic equipment, especially applications where positive voltage power supplies need to be controlled. .
.
2. Rated voltage (VDS): 60V.
- This is the maximum voltage that the channel MOSFET can withstand, indicating that it is suitable for circuits that need to handle up to 60V. .
.
3. Rated current (ID): 0.3A.
- This is the rated current of the channel MOSFET, indicating the small current load it can handle. .
.
4. Static drain-source resistance (RDS(ON)): .
- RDS(ON) is the resistance of the channel MOSFET in the on-state. At 10V it has a resistance of 2800mΩ and at 4.5V it is 3000mΩ. This indicates that in the on-state, its resistance is relatively high, making it suitable for low-power applications. .
.
5. Gate-source voltage rating (Vgs): 20V (±V).
- This means that the rated range of gate-source voltage is plus or minus 20V. The gate-source voltage is used to control the on and off states of the MOSFET. .
.
6. Threshold Voltage (Vth): 1.6V.
- This is the threshold voltage of a channel MOSFET and represents the voltage that needs to be applied to the gate in order for the device to start conducting. .
.
Application Introduction: .
This type of N-channel MOSFET is usually used in low-power applications, including but not limited to the following fields and modules: .
.
1. Signal Switching: Due to its lower current and voltage capabilities, it is suitable for low power signal switching applications such as audio signal switching. .
2. Power switch: In low-power power management circuits, it can be used to switch power supplies to achieve energy efficiency improvements. .
3. Signal amplifier: It can be used for input impedance matching of low-power signal amplifiers. .
4. Current source: In small current source circuits, it can be used to stabilize the output current. .
.
In summary, this type of N-channel MOSFET is suitable for applications requiring low-power switching and signal control, but is not suitable for high-power applications because of its limited current and voltage capabilities.