Model: MMDF3P03HDR2G-VB.
Silkscreen: VBA4338.
Brand: VBsemi.
Parameters:.
- Type: 2 P-channel.
- Rated voltage (Vds): -30V.
- Maximum continuous current (Id): -7A.
- On-resistance (RDS(ON)): 35mΩ @ 10V.
- Gate-source voltage range (Vgs): 20V (positive and negative).
- Threshold voltage (Vth): -1.5V.
- Package: SOP8.
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Application Introduction:.
MMDF3P03HDR2G-VB is a dual P-channel field effect transistor (MOSFET) suitable for electronic applications that require negative voltage operation. It has a wide range of applications in power switching, battery management and load switching. .
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Detailed parameter description: .
1. **Type**: This is a dual P-channel MOSFET, which means it turns on when a negative voltage is input. This type of MOSFET is often used in circuits that need to control two negative voltages at the same time. .
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2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is -30V. This means it can operate under negative voltage conditions. .
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3. **Maximum continuous current (Id)**: The maximum current handling capacity of this MOSFET is -7A. The negative sign indicates that the current flows from source to drain. .
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4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 35mΩ, indicating that the power consumption in the on state is relatively low. .
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5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of the MOSFET is 20V, which means that a voltage of up to 20V is required to control its conduction state. .
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6. **Threshold voltage (Vth)**: The threshold voltage of this MOSFET is -1.5V. This is the gate-source voltage that starts the MOSFET to conduct. .
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7. **Package**: This MOSFET adopts SOP8 package, which is a common package type suitable for a variety of circuit applications. .
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Application fields: .
MMDF3P03HDR2G-VB This dual P-channel MOSFET is suitable for a variety of electronic modules and devices that require negative voltage operation, including but not limited to the following modules: .
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1. **Power switch**: It can be used for negative voltage power switch, such as voltage conversion and power control. .
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2. **Battery management**: It can be used for battery charge and discharge management to ensure safe and efficient battery use. .
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3. **Load switch**: used to control the on and off of loads, such as LED lighting systems, power tools and electronic equipment. .
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4. **Power protection**: can be used in power protection circuits to prevent abnormal conditions such as overcurrent and overvoltage. .
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5. **Current control**: can be used in current control circuits such as motor control and current amplifiers. .
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In short, this dual P-channel MOSFET is suitable for electronic modules and devices that require negative voltage operation, providing power control and current management functions, especially in applications where two negative voltages need to be controlled. .