Model: ME20N03-VB.
Silk screen: VBE1310.
Brand: VBsemi.
Parameter description: .
- Polarity: N channel.
- Rated voltage: 30V.
- Maximum continuous drain current: 70A.
- Static drain-source resistance (RDS(ON)): 7mΩ @ 10V, 9mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): 1.8V.
- Package: TO252.
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Application introduction: .
ME20N03-VB is a N-channel field-effect transistor (MOSFET) devices with low drain-source resistance and high current handling capabilities are suitable for a variety of high-power electronic applications. .
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Application fields: .
1. **Power module**: ME20N03-VB is suitable for switching power supplies, power management modules and high-power power amplifiers, which helps to improve power conversion efficiency, especially Suitable for high power applications. .
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2. **Motor Drive**: The high current handling capability and low resistance of this MOSFET device make it ideal for use in high power motor drives, motor control and motor protection, and can be used in industrial motors and automotive motors and other fields. .
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3. **Battery Protection**: In high-power battery packs, such as electric vehicles, battery energy storage systems and battery protection modules, ME20N03-VB can be used for battery protection and high current of the battery pack manage. .
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4. **Power switch**: This MOSFET can be used in high power and high current switching circuits, such as power switches, DC-DC converters and power inverters. .
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5. **Audio Amplifier**: Among high-power audio amplifiers, ME20N03-VB can be used for output-level power amplification for sound systems and audio equipment. .
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In short, ME20N03-VB is a high-power electronic device suitable for various high-power electronic applications that require high current carrying capacity, low resistance and reliability. It can be used in power management, motor control, battery protection, power switches, audio amplifiers and other modules.