Model: ME20N10-VB.
Silk screen: VBE1101M.
Brand: VBsemi.
Parameters: N channel, 100V, 18A, RDS(ON), 115mΩ@10V, 121mΩ@4.5V, 20Vgs(± V); 1.6Vth(V); TO252.
Package: TO252.
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Detailed parameter description: .
- Model: ME20N10-VB.
- Silk screen: VBE1101M.
- Brand: VBsemi.
- Channel type: N channel.
- Maximum withstand voltage: 100V.
- Maximum current: 18A.
- Static on-resistance: 115mΩ @ 10V, 121mΩ @ 4.5V.
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: 1.6V.
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Application introduction: .
ME20N10-VB is a N-channel MOSFET, suitable for a variety of electronic modules and applications, especially where medium current switching and moderate on-resistance are required. .
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Application fields: .
This product is usually used in modules in the following fields: .
1. Power supply module: used for power switches and current control, such as power adapters and switches power supply. .
2. LED driver module: Control LED brightness and color temperature to achieve energy efficiency optimization, such as LED lighting driver circuit. .
3. Electronic switch module: in various switch applications, such as lighting switches, power management switches, etc. .
4. Battery charge and discharge protection module: used to protect batteries and manage battery status, such as portable electronic devices. .
5. Motor control module: used for motor speed and direction control, such as small power tools. .
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The device's moderate current capability and moderate on-resistance make it suitable for a variety of low- to medium-power applications, helping to improve the performance and efficiency of electronic systems.