Model: MDD1951RH-VB.
Silkscreen: VBE1638.
Brand: VBsemi.
Parameters:.
- N-channel.
- Maximum withstand voltage: 60V.
- Maximum current: 45A.
- On-state resistance: 24mΩ @ 10V, 28mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage: 1.8V.
Package: TO252.
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The MDD1951RH-VB model is an N-channel MOSFET transistor suitable for a variety of applications. The following is a detailed parameter description and application introduction of the product:.
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**Detailed parameter description:**.
- Maximum withstand voltage: 60V, which means it can withstand a voltage of no more than 60 volts. .
- Maximum current: 45A, the MOSFET can withstand a current of up to 45 amperes. .
- On-state resistance: Under different voltages, its on-state resistance is 24 milliohms (@ 10V) and 28 milliohms (@ 4.5V). This shows that it has a relatively low resistance in the on state. .
- Threshold voltage: 1.8V, indicating that the MOSFET starts to conduct at this voltage. .
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**Application Introduction:**.
This MOSFET (MDD1951RH-VB) is suitable for circuit modules in multiple fields, mainly for current control, voltage switching and power amplification. Specific applications include but are not limited to the following fields:.
1. **Power Management Module:** Used in switching power supplies, voltage regulator circuits and power switches, helping to achieve efficient energy management. .
2. **Motor Control:** As part of a motor driver or motor control module, it is used for current control and voltage switching. .
3. **Power Inverter:** In the inverter, it can be used to convert DC to AC, suitable for solar inverters, electric vehicle chargers, etc. .
4. **Power Switch and Protection:** Used in power switch, short circuit protection and over current protection circuits. .
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In conclusion, MDD1951RH-VB is a versatile N-channel MOSFET suitable for a variety of electronic applications, mainly used for current control and power management.