Model: MDD1754RH-VB.
Silk screen: VBE1410.
Brand: VBsemi.
Parameter description: .
- Polarity: N channel.
- Rated voltage: 40V.
- Maximum continuous drain current: 50A.
- Static drain-source resistance (RDS(ON)): 12mΩ @ 10V, 14mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): 1.78V.
- Package: TO252.
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Application introduction: .
MDD1754RH-VB is a N-channel field-effect transistor (MOSFET) devices with high current handling capabilities and low drain-source resistance. These properties make it useful in a variety of applications. .
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Application fields: .
1. **Power module**: Since MDD1754RH-VB has low drain-source resistance, it is suitable for switching power supplies and battery management systems, helping Improve energy conversion efficiency. .
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2. **Motor Drive**: The high current handling capability of this MOSFET device makes it ideal for use in motor drivers and motor control modules. It provides high performance in motor control systems. .
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3. **Electric Vehicles**: In the power control unit of electric vehicles, MDD1754RH-VB can be used for battery management, motor drive and charging control to improve the efficiency and performance of electric vehicles. .
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4. **Industrial Automation**: In industrial automation systems, this MOSFET device can be used to control and adjust industrial equipment, machinery and sensors to achieve automation and intelligent control. .
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5. **LED Lighting**: MDD1754RH-VB can be used for LED driver and lighting control to achieve efficient LED lighting system. .
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In short, MDD1754RH-VB is a versatile electronic device suitable for various applications requiring high current, low resistance, high efficiency and reliability.