LR120N-VB, a N-channel TO252 MOSFET datasheet parameters video explanation

According to the model and parameters provided, the following are the detailed parameters and application introduction of this MOSFET model LR120N-VB: .
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**Model:** LR120N-VB.
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** Silk screen: ** VBE1101M.
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** Brand: ** VBsemi.
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**Parameters: **.
- Channel type: N channel.
- Rated voltage: 100V.
- Maximum current: 18A.
- Static drain-source resistance (RDS(ON)): 115mΩ @ 10V, 121mΩ @ 4.5V.
- Gate-source voltage threshold (Vth): 1.6V.
- Standard gate-source voltage (±V): 20V.
- Package: TO252.
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**Product application introduction:**.
LR120N -VB is an N-channel MOSFET with high rated voltage, high current capability and moderate drain-source resistance, making it suitable for power switch and amplifier applications in various electronic devices and modules. The performance parameters of this MOSFET make it suitable for a variety of applications. .
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**Product application areas:**.
1. **Power management module:** This model of MOSFET can be used in power management modules, such as power switches, in order to effectively control current, Improve efficiency and reduce power consumption. .
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2. **Motor drive:** Can be used in motor drive circuits, such as DC motors and stepper motors, to provide efficient motor control and power amplification. .
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3. **Power switch:** In power switch applications, used to switch power connections, such as in power management units. .
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4. **Battery protection:** Used in battery protection circuit to control the charging and discharging of the battery to ensure the safety and performance of the battery. .
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5. **Inverter and power inverter:** Suitable for inverter circuits, used to convert DC power to AC power, usually used in solar inverters and power inverters converter. .
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In summary, LR120N-VB MOSFET is widely used in many fields for power control, current switching and signal amplification purposes. Due to its performance parameters, it plays a key role in electronic modules and devices.