LBSS139LT1G detailed parameter description:.
- Polarity: N-channel.
- Rated voltage: 60V.
- Rated current: 0.3A.
- On-resistance: 2800mΩ @ 10V, 3000mΩ @ 4.5V.
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: 1.6Vth (V).
- Package type: SOT23.
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Application introduction:.
LBSS139LT1G is an N-channel MOSFET suitable for various power management and low-power applications. It has lower rated current and higher rated voltage characteristics. .
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By controlling the gate-source voltage of 20Vgs (±V), the switch tube can be turned on and off, and the current can be controlled and the switching state can be converted. Its higher on-resistance means operation at a lower current. .
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LBSS139LT1G adopts SOT23 package, which is suitable for use in various circuit boards and modules. .
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This device is mainly used in low-power fields, such as power management, signal processing and some low-power control circuits. .
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In short, LBSS139LT1G is an N-channel MOSFET suitable for power management and low-power applications. It is suitable for circuits in low-power fields, such as power management, signal processing and low-power control circuits.