Model: IRLR3103TRPBF.
Silk screen: VBE1307.
Brand: VBsemi.
Parameters: .
- Channel type: N channel.
- Rated voltage: 30V.
- Rated current : 60A.
- RDS(ON): 10mΩ @ 10V, 11mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage: 1.6V.
- Package Type: TO252.
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Application Introduction: .
IRLR3103TRPBF (silk screen: VBE1307) is an N-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
IRLR3103TRPBF is an N-channel power MOSFET with high current carrying capacity and low on-resistance. The main parameters include rated voltage of 30V, rated current of 60A, RDS(ON) of 10mΩ @ 10V, 11mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of 1.6V, and package type TO252. .
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Application fields: .
IRLR3103TRPBF (VBE1307) is suitable for a variety of fields and application scenarios, mainly used in circuits that require high current carrying capacity and low on-resistance. The following are some typical application areas: .
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1. Power management module: IRLR3103TRPBF can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system. .
2. Motor drive: It can be used in motor drive circuits to provide high-power and high-efficiency power output, and is suitable for motor drives in industrial automation and mechanical equipment. .
3. Automotive electronic systems: IRLR3103TRPBF is suitable for power management, motor drive and lighting control in automotive electronic systems, meeting the high current and high power requirements of automotive electronic systems. .
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In summary, IRLR3103TRPBF (VBE1307) is an N-channel power MOSFET, suitable for modules in power management modules, motor drives and automotive electronic systems. It has high current carrying capacity and low on-resistance, making it suitable for circuits requiring high power and efficiency.