IRLR3110ZPBF (VBE1101N) parameter description: N-channel, 100V, 70A, on-resistance 9mΩ@10V, 20mΩ@4.5V, gate-source voltage range 20V (±V), threshold voltage 3.2V, package: TO252. . Application introduction: IRLR3110ZPBF is suitable for high-power N-channel MOSFET, which is commonly found in modules such as power switches, motor control and inverters. . Its extremely low on-resistance enables it to perform well in low voltage drop scenarios. . Advantages and applicable fields: Suitable for high-power applications such as power switches, motor control and inverter modules. . The extremely low on-resistance helps reduce power loss and improve efficiency. .
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