Model: IRFR3518TRPBF-VB.
Silk screen: VBE1104N.
Brand: VBsemi.
Parameters:.
- Package type: TO252.
- Channel type: N—Channel.
- Maximum drain voltage (Vds): 100V.
- Maximum drain current (Id): 40A.
- Static drain-source resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): 1.8V.
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Package: TO252.
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Application Introduction:.
IRFR3518TRPBF-VB is an N-Channel trench MOSFET suitable for a variety of high power circuits and module designs, especially in applications that require high performance N-Channel MOSFETs. .
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Field module application: .
1. **Power module:** Suitable for high-power switching power supply, power inverter and other module designs, capable of providing efficient power conversion and stable power output. .
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2. **Motor drive module:** Due to its high current and low leakage voltage characteristics, it can be used in motor drive and control modules to provide reliable current output and driving performance, especially in applications requiring higher power. .
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3. **Battery protection module:** Used in battery charge and discharge management circuits to provide efficient battery management and protection functions. .
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4. **LED lighting module:** In LED lighting systems that require high brightness and high power, IRFR3518TRPBF-VB can be used in switching power supply design to achieve efficient LED lighting. .
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5. **Power amplifier module:** In power amplifier circuits that require N-Channel MOSFET, IRFR3518TRPBF-VB can be used to achieve high-performance power amplification. .
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Please note that the above are some typical application scenarios. When actually using them, they need to be selected and designed according to the specific circuit and system requirements. When integrating IRFR3518TRPBF-VB, it is recommended to read its data sheet carefully to obtain detailed electrical characteristics and operation information.