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IRFR3418TRPBF-VB, a N-channel TO252 MOSFET datasheet parameters video explanatio
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**IRFR3418TRPBF-VB**.
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**Silk screen:** VBE1806 .
**Brand:** VBsemi .
**Parameter:** TO252; N—Channel , 80V; 110A; RDS(ON)=5.5mΩ@VGS=10V, VGS=20V; Vth=2.89V .
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**Package:** TO252 .
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** Detailed parameter description: ** .
- **Channel type: ** N—Channel .
- **Maximum withstand voltage: ** 80V .
- **Maximum current: ** 110A.
- **On-resistance:** 5.5mΩ (at VGS=10V), 4mΩ (at VGS=20V) .
- **Threshold voltage:** 2.89V .
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**Application Introduction:** .
This device is suitable for modules that require high voltage and high current processing, providing reliable N-channel power switching function. Main application areas include but are not limited to power amplifiers, switching power supplies, motor drivers, etc. .
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**Function:** .
- Provide efficient N-channel power switching function. .
- Suitable for applications requiring high current and high frequency operation. .
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**Application field module:**.
1. **Power amplifier module:** In audio and radio frequency amplifiers, it can be used to provide efficient power amplification. .
2. **Switching power supply module:** Used to build an efficient switching power supply and stabilize the output voltage. .
3. **Motor driver module:** Suitable for driving motors and providing reliable power switch control. .
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**Usage Precautions:**.
1. **Voltage and current limits:** Do not exceed the specified maximum voltage and current. .
2. **Heat Dissipation:** In high power applications, ensure effective heat dissipation to prevent overheating. .
3. **Electrostatic protection:** Take anti-static measures during handling and installation to avoid damaging the device. .
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