Detailed parameter description: .
- Model: IRFR3410TRPBF-VB.
- Silk screen: VBE1104N.
- Brand: VBsemi.
- Type: N channel.
- Maximum voltage (Vds) : 100V.
- Maximum current (Id): 40A.
- On-state resistance (RDS(ON)): 30mΩ @ 10V, 31mΩ @ 4.5V.
- Threshold voltage (Vth): 1.8V .
- Package: TO252.
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Application introduction: .
IRFR3410TRPBF-VB is a power consumption N-channel MOSFET. It is suitable for a variety of applications requiring high voltage and current, with low on-state resistance and lower threshold voltage. Therefore, it is particularly suitable for use in areas such as power amplifiers, switching power supplies, motor drivers and chargers. .
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This product is widely used in modules in the following fields: .
1. Power amplifier: IRFR3410TRPBF-VB can be used to design audio amplifiers, radio frequency amplifiers and other modules that require power amplification. .
2. Switching power supply: IRFR3410TRPBF-VB can be used as power switch and control component in switching power supply. It enables high-efficiency and high-performance switching power supply designs. .
3. Motor driver: IRFR3410TRPBF-VB can be used to design motor drivers in electric vehicles, robots and other industrial applications to achieve high efficiency and precise control. .
4. Charger: IRFR3410TRPBF-VB can be used to design various types of chargers, including mobile device chargers, electric vehicle chargers, and battery chargers. .
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Summary: .
IRFR3410TRPBF-VB is a powerful N-channel MOSFET with high voltage and high current capability, low on-state resistance and low threshold voltage. It can be widely used in modules in the fields of power amplifiers, switching power supplies, motor drivers and chargers. .