Model: IRFR320TRPBF-VB.
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Silk screen: VBE165R04.
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Brand: VBsemi.
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Parameters: .
- Package type: TO252.
- Channel type: N-Channel.
- Rated voltage: 650V.
- Maximum current: 4A.
- On-state resistance: RDS(ON) = 2200mΩ @ VGS=10V, VGS=20V.
- Threshold voltage: Vth = 3.5V.
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Package: TO252.
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**Detailed parameter description:**.
1. **Package type (Package Type):** TO252, indicating that the device uses TO252 package. .
2. **Channel Type:** N-Channel, indicating that this is an N-channel MOSFET. .
3. **Rated Voltage:** 650V, indicating the maximum voltage at which the device can operate normally. .
4. **Maximum Current:** 4A, indicating the maximum current that the device can withstand. .
5. **On-State Resistance:** RDS(ON) = 2200mΩ @ VGS=10V, VGS=20V, indicating the resistance in the open state under a specific gate-source voltage. .
6. **Threshold Voltage:** Vth = 3.5V, which represents the voltage required for the device to switch from the off state to the on state under the action of the gate-source voltage. .
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**Application Introduction:**.
IRFR320TRPBF-VB is an N-Channel MOSFET suitable for a variety of applications, including but not limited to: .
1. ** Power Switches:** Due to its N-channel nature, it can be used in power switches and power inverters. .
2. **Motor drive:** Suitable for high-voltage drive circuits for DC motors and stepper motors, providing efficient current control. .
3. **Power Inverter:** Used in solar inverters and other power inverters to provide efficient energy conversion. .
4. **Power Management Module:** Suitable for high voltage power management applications, such as power adapters, power switches, etc. .
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Please note that the data sheet and application manual of the device should be carefully referenced in specific designs to ensure correct use and performance.