Model: IRFR1010ZTRPBF-VB.
Silkscreen: VBE1606.
Brand: VBsemi.
Parameters: TO252; N-Channel, 60V; 110A; RDS(ON)=4.5mΩ@VGS=10V, VGS=20V; Vth=2.8V; .
Package: TO252.
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**Detailed parameter description:**.
- **Model**: IRFR1010ZTRPBF-VB.
- **Silkscreen**: VBE1606.
- **Brand**: VBsemi.
- **Parameter**: .
- Package: TO252.
- Channel type: N-Channel.
- Rated voltage: 60V.
- Rated current: 110A.
- On-state resistance (RDS(ON)): 4.5mΩ @ VGS=10V, VGS=20V.
- Gate-source threshold voltage (Vth): 2.8V.
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**Application Introduction:**.
IRFR1010ZTRPBF-VB is a high-performance N-channel MOSFET suitable for a variety of electronic applications, especially in the following fields and corresponding modules:.
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1. **Power Module:**.
Due to its high rated voltage and current carrying capacity, IRFR1010ZTRPBF-VB is very suitable for power modules, including DC power supplies and switching power supplies. .
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2. **Motor Drive Module:**.
The high current characteristics of this device make it an ideal choice for motor drive modules and can be used in various motor control applications. .
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3. **Power Inverter:**.
Suitable for power inverters, it can provide reliable performance under different voltage and frequency requirements. .
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4. **Power tools:**.
Due to its high current and low on-resistance, it can be used in power tools to provide reliable power control. .
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**Precautions for use:**.
- Please use the voltage and current according to the maximum ratings in the product data sheet. .
- Ensure that it is used within the specified operating temperature range to ensure performance and reliability. .
- Carefully design the heat dissipation system to ensure that the device maintains the appropriate operating temperature under high load conditions. .
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Please note that the above suggestions are for reference only and the specific application needs to be adjusted according to project needs and design requirements.