Model: IRFR1018ETRPBF-VB. Silkscreen: VBE1615. Brand: VBsemi. Parameters:. - N-channel. - Maximum withstand voltage: 60V. - Maximum leakage current: 60A. - Static on-resistance (RDS(ON)): 9mΩ @ 10V, 11mΩ @ 4.5V, 20Vgs (±V). - Threshold voltage (Vth): 1.87V. - Package: TO252. . Application Introduction:. IRFR1018ETRPBF-VB is an N-channel field effect transistor suitable for high power electronic applications. It has low on-resistance and withstand voltage characteristics, suitable for electronic systems requiring high current and high power. . . Field module application: . 1. Power switch module: IRFR1018ETRPBF-VB can be used in power switch applications such as high power power switch and power converter. . 2. Motor driver: In high power motor drive applications, it can provide the required high current and high efficiency. . 3. High power amplifier: Suitable for high power amplifier modules such as audio amplifier and RF amplifier. . . These features make IRFR1018ETRPBF-VB widely used in high power electronic systems.
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