**IPB120N04S4-02-VB**.
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**Silkscreen:** VBL1402 .
**Brand:** VBsemi .
**Parameters:** TO263; N—Channel, 40V; 180A; RDS(ON)=2mΩ@VGS=10V, VGS=20V; Vth=1~3V .
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**Package:** TO263 .
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**Detailed parameter description:** .
- **Channel type:** N—Channel .
- **Maximum withstand voltage:** 40V .
- **Maximum current:** 180A .
- **On-resistance:** 2mΩ (at VGS=10V), 2mΩ (at VGS=20V) .
- **Threshold voltage:** 1~3V .
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**Application Introduction:** .
This device is an N-Channel MOSFET, suitable for high current applications that require forward current control, such as power switching and motor drive. .
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**Function:** .
- Controls forward current, suitable for high current modules that require N-Channel channels. .
- Plays a key role in power switching and motor drive and other fields. .
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**Application Field Modules:**.
1. **Power Switch Module:** Used to build a reliable forward current switching circuit to ensure the normal operation of the power system. .
2. **Motor Drive Module:** Applicable to motor drive systems that require high current control. .
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**Precautions for Use:**.
1. **Voltage and Current Limitation:** Do not exceed the specified maximum voltage and current. .
2. **Temperature Control:** Pay attention to the temperature of the device during operation to avoid overheating. .
3. **Threshold voltage selection:** Select the appropriate threshold voltage based on application requirements. .
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If you need further information or have other questions, please let me know.