**VBsemi IPB100N04S4-H2-VB**.
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**Detailed parameter description:**.
- Type: N-Channel MOSFET.
- Rated Voltage (VDS): 40V.
- Maximum current (ID): 180A.
- On-resistance (RDS(ON)): 2mΩ @ VGS=10V, VGS=20V.
- Threshold voltage ( Vth): 1~3V.
- Package: TO263.
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**Application Profile:**.
This device is suitable for applications requiring high current and low on-resistance, especially Functions in modules in the following areas: .
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1. **Power module:**.
- Used for high-performance power supply, providing reliable power switching. .
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2. **Motor drive:**.
- In the motor control module, used for efficient current control and motor drive. .
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3. **Power Inverter:**.
- Used in solar inverters and other power inverters to improve energy conversion efficiency. .
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**Application fields:**.
- Industrial electronics.
- Automotive electronics.
- Solar and renewable energy systems.
- Power management module.
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**Function:**.
- Provide high current carrying capacity.
- Reduce power loss.
- Provide stability in high frequency switching applications.
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**Usage Precautions:**.
1. Please operate according to the working conditions recommended in the data manual. .
2. Make sure the thermal design is adequate to prevent overheating. .
3. Pay attention to the maximum rated current and voltage to avoid device damage. .
4. Consider the variation of threshold voltage in the design and perform appropriate calibration. .