**VBsemi GTT8205S-A-VB**.
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**Detailed parameter description:**.
- Type: N-Channel MOSFET.
- Rated Voltage (VDS): 20V.
- Maximum current (ID): 6A.
- On-resistance (RDS(ON)): 24mΩ @ VGS=4.5V, VGS=20V.
- Threshold voltage (Vth): 0.5V.
- Package: SOT23-6.
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**Application Profile:**.
This device is suitable for low power, small signal switching applications, especially in It plays a role in the following field modules: .
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1. **Power switch:**.
- In the low-power power switch module, it is used to control the switch of the power supply. .
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2. **Power Management:**.
- Used for small power management modules to provide efficient power control. .
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3. **Battery Management:**.
- Suitable for battery management circuits in portable electronic devices. .
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**Application fields:**.
- Portable electronic equipment.
- Power management module.
- Low power switching circuit.
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** Function:**.
- Provide efficient switching control of small signals.
- Achieve energy-saving control in low power systems.
- Used for small signal switching applications.
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* *Usage Precautions:**.
1. Please operate according to the recommended working conditions in the data sheet. .
2. Pay attention to the specific value of the threshold voltage and ensure that this parameter is considered in the design. .
3. Make sure the current and voltage are within the specified range of the device to avoid damage to the device.