Model: H7N0308CF-VB.
Silkscreen: VBMB1303.
Brand: VBsemi.
Parameters: N-channel, 30V, 140A, RDS(ON) 3mΩ @ 10V, 3.5mΩ @ 4.5V, 20Vgs (±V); 1~3Vth (V).
Package: TO220F.
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Detailed parameter description and application introduction:.
1. Channel type: N-channel.
- This means that this is an N-channel MOSFET, which is commonly used in electronic devices, especially in applications that need to control positive voltage power supplies. .
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2. Rated voltage (VDS): 30V.
- This is the maximum voltage that the trench MOSFET can withstand, indicating that it is suitable for circuits that need to handle up to 30V. .
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3. Rated Current (ID): 140A.
- This is the rated current of the trench MOSFET, indicating the very high current load it can handle. .
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4. Static Drain-Source Resistance (RDS(ON)): .
- RDS(ON) is the resistance of the trench MOSFET in the on state. At 10V, its resistance is 3mΩ, while at 4.5V it is 3.5mΩ. This indicates that in the on state, its resistance is very low, which helps to reduce power consumption and heat. .
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5. Gate-Source Voltage Rating (Vgs): 20V (±V).
- This indicates that the gate-source voltage is rated to be between plus and minus 20V. The gate-source voltage is used to control the on and off states of the MOSFET. .
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6. Threshold Voltage Range (Vth): 1V to 3V.
- This is the threshold voltage range of the channel MOSFET, which indicates the voltage that needs to be applied to the gate to make the device start conducting. In this case, the threshold voltage range is 1V to 3V. .
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Application Introduction: .
This type of N-channel MOSFET has a very high current rating and low drain-source resistance, so it is often used in high-power electronic devices and modules such as: .
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1. Power Switch: This MOSFET can be used in power switching modules such as DC-DC converters to achieve efficient power conversion. .
2. Motor Control: It can be used in motor drive and control as it can handle high current loads. .
3. Power Inverter: In high-power solar inverters and UPS (Uninterruptible Power Supply), N-channel MOSFET can be used to control the flow of power. .
4. High Power Amplifier: In audio amplifiers and high-frequency amplifiers, it can be used for power amplification. .
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In short, this type of N-channel MOSFET is suitable for fields that need to handle high power and high current loads to meet the needs of power switching and power management, especially high power applications that need to handle positive voltage power supplies.