Model: FQT3P20TF-VB.
Silk screen: VBJ2201K.
Brand: VBsemi.
Parameters:.
- Channel type: P—Channel.
- Rated voltage: -200V.
- Rated current: -0.4A.
- On-resistance (RDS(ON)): 1400mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -1.5V.
- Package: SOT223.
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Application Introduction:.
VBsemi's FQT3P20TF-VB is a P—Channel field effect transistor suitable for high voltage, low current application scenarios. It is widely used in various electronic systems and power modules, providing efficient power control and switching performance. .
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**Main features:**.
1. Suitable for high voltage environment, rated voltage is -200V. .
2. Moderate rated current, suitable for low power applications, rated current is -0.4A. .
3. Relatively high on-resistance, suitable for low power control applications. .
4. SOT223 package, suitable for compact circuit design. .
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**Application fields and modules:**.
1. **Power switch module:** Used to build high-performance high-voltage power switch module, which can be applied to communication equipment, medical equipment and other fields. .
2. **Power regulator:** Provides high-efficiency power control in low-power power regulator, suitable for portable electronic devices, wireless communication modules and other scenarios. .
3. **LED driver:** Suitable for low-power LED driver, such as lighting, display and other fields. .
4. **Battery protection module:** Provides overvoltage protection function in battery protection module for battery-powered system. .
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**Precautions for use:**.
1. Please ensure that the device is connected correctly during design, and avoid reverse connection and overload to prevent damage to the device. .
2. Please use the voltage and current according to the maximum ratings provided in the data sheet to ensure stable and reliable performance. .
3. Pay attention to appropriate heat dissipation measures to maintain the appropriate temperature of the device during operation. .
4. Ensure that the device operates under the specified environmental conditions and avoid exceeding the temperature and voltage limits.