Model: FQPF85N06-VB.
Silk screen: VBMB1615.
Brand: VBsemi.
Parameter description: .
- Polarity: N channel.
- Rated voltage: 60V.
- Maximum continuous drain current: 70A.
- Static drain-source resistance (RDS(ON)): 10mΩ @ 10V, 12mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): 1.5V.
- Package: TO220F.
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Application introduction: .
FQPF85N06-VB is a N-channel field-effect transistor (MOSFET) devices with high voltage tolerance and low drain-source resistance are suitable for a variety of high-performance electronic applications. .
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Application fields: .
1. **Power module**: FQPF85N06-VB is suitable for high-performance switching power supplies, power management modules and battery protection circuits, helping to improve power conversion efficiency . .
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2. **Motor Drive**: The high current handling capability and low resistance of this MOSFET device make it ideal for use in motor drives, motor control and motor protection, and can be used in a variety of motor applications . .
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3. **Battery Management**: In electric vehicles, power tools and portable equipment, FQPF85N06-VB can be used in battery management systems to ensure safe charging, discharging and protection of batteries. .
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4. **High Power LED Driver**: FQPF85N06-VB is suitable for high power LED lighting applications and provides efficient LED driver. .
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5. **Power switch**: This MOSFET can be used in high voltage and high current switching circuits, such as power switches and power inverters. .
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In short, FQPF85N06-VB is a versatile electronic device suitable for various electronic applications requiring high voltage, high current capability, low resistance and reliability. It can be used in power management, motor control, battery protection, high-power LED driver, power switch and other modules.