Model: FQD20N06-VB.
Silk screen: VBE1638.
Brand: VBsemi.
Parameters:.
- N channel.
- Rated voltage: 60V.
- Maximum leakage current : 45A.
- Static drain-source resistance (RDS(ON)): 24mΩ @ 10V, 28mΩ @ 4.5V, 20Vgs.
- Threshold voltage (Vth): 1.8V.
- Package ：TO252.
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Application Introduction: .
FQD20N06-VB is an N-channel field effect transistor suitable for various electronic applications. It has the characteristics of high voltage, high current and low on-resistance. , can be used in circuit modules in a variety of fields: .
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1. **Power switch**: This N-channel MOSFET can be used in power switching modules, such as power switching circuits, voltage regulators and inverters device. Its ability to effectively control current and voltage makes it suitable for a variety of power management applications. .
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2. **Motor drive**: FQD20N06-VB is suitable for motor drive modules, including DC motor driver, stepper motor controller and motor control circuit. It helps achieve efficient motor operation. .
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3. **Switching power supply**: In switching power supply, this MOSFET can be used to control and adjust the power output to meet the power needs of various electronic devices. Its use is very common in switching power supply topologies. .
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4. **Current adjustment module**: FQD20N06-VB can also be used in current adjustment modules, such as LED drivers, power management units and current adjustment circuits to ensure the accuracy and stability of circuit output sex. .
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5. **Electronic Switch**: It is widely used in various electronic switching applications, including electronic switching, circuit protection and signal switching. .
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In summary, FQD20N06-VB N-channel MOSFET is suitable for a variety of applications requiring high voltage, high current and low on-resistance, including power supplies, motor control, switching power supplies, current regulation and electronic switches, etc. field. This device helps achieve efficient, reliable and precise circuit operation to meet the needs of different application areas.