Model: FQD2N60C-VB.
Silk screen: VBE165R02.
Brand: VBsemi.
Parameters:.
- N channel.
- Rated voltage: 650V.
- Maximum current: 2A.
- Turn-on resistance: 4300mΩ @ 10V, 3440mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage: 2V (Vth).
- Package: TO252.
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Application Introduction:.
FQD2N60C-VB is a high-voltage N-channel MOSFET device suitable for a variety of high-voltage applications. This device can play a role in the following application modules: .
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1. Power switch module: FQD2N60C-VB can be used in high-voltage power switches, switching regulators, inverters, etc. to provide efficient power supply management and power conversion. .
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2. Lighting driver module: Suitable for high-voltage LED drive and lighting systems to achieve efficient LED brightness control and lighting management. .
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3. High-voltage switch module: used for high-voltage switching applications, such as electromagnetic relays and high-voltage switching circuits. .
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4. Power inverter: Plays a role in high voltage inverters such as solar inverters and electric vehicle chargers. .
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Due to its high voltage withstand capability, FQD2N60C-VB is suitable for areas requiring high-voltage switching, power management and power conversion, providing high-performance and high-efficiency power solutions for systems.