Model: FDG6316P-VB.
Silk screen: VBK4223N.
Brand: VBsemi.
Parameter description: .
- MOSFET type: 2 P channels.
- Rated voltage: -20V.
- Maximum current: -1.5A.
- On-resistance (RDS(ON)): 230mΩ @ 4.5V, 276mΩ @ 2.5V, 12Vgs.
- Threshold voltage (Vth): -0.6~ -2V.
- Package: SC70-6.
.
Application introduction: .
FDG6316P-VB is a dual P-channel MOSFET, suitable for a variety of electronic equipment and circuits. It has a wide range of applications in some domain-specific modules.
-VB can be used in signal switch modules to control the connection and disconnection of signal lines. .
- In low-power electronic devices, such as smartphones, tablets, etc., it is used to switch various signal lines to achieve power saving and automatic control. .
.
2. **Battery Management Module**: .
- This MOSFET is suitable for battery charge and discharge control in the battery management module. .
- Used for safe battery management and charging in portable electronic devices, laptops, power tools, and more. .
.
3. **Low Power Circuits**: .
- The low threshold voltage and dual P-channel design of FDG6316P-VB make it very useful in low power circuits. .
- Used in low-power sensor modules and microcontroller circuits that require a high degree of integration to achieve longer battery life. .
.
4. **Signal amplification module**: .
- In some audio and signal amplification modules, FDG6316P-VB can be used to control the signal path to achieve signal amplification and processing. .
- It has application potential in the fields of audio equipment, audio amplifiers and other fields. .
.
In short, FDG6316P-VB is a dual P-channel MOSFET, suitable for modules in the fields of signal switching, battery management, low-power circuits and signal amplification. Its dual P-channel design and low power consumption make it an effective electronic component that can be used to improve the performance and efficiency of circuits.