FDG6321C detailed parameter description:.
- Polarity: N+P channel.
- Rated voltage: ±20V.
- Rated current: 2.5A / -1.5A.
- On-resistance: 130mΩ / 230mΩ @ 4.5V, 160mΩ / 280mΩ @ 2.5V.
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: ±0.6~2Vth (V).
- Package type: SC70-6.
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Application introduction:.
FDG6321C is an N+P channel MOSFET that includes the characteristics of both N channel and P channel, and has a wide range of applications in various power management and power amplifier applications. The device has high rated voltage and rated current, and can provide reliable and efficient current switching functions. .
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By controlling the gate-source voltage of 20Vgs (±V), the switch tube can be turned on and off, and the current can be controlled and the switch state can be switched. Its lower on-resistance can reduce power consumption and improve system efficiency. .
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FDG6321C adopts SC70-6 package, which is compact and suitable for use in applications with limited space. .
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This device is widely used in power switches, power inverters, motor drivers and occasions where N-channel and P-channel MOSFETs are required at the same time. In these fields, FDG6321C can provide reliable power switch control and multi-channel current transmission to achieve efficient current switching operation. .
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In short, FDG6321C is an N+P channel MOSFET suitable for various application modules of power management and power amplifiers, especially for occasions where positive and negative voltages need to be controlled simultaneously, such as power switches, motor drivers and other fields.