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FDD3672-VB, a N-channel TO252 MOSFET datasheet parameters video explanation
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Model: FDD3672-VB.
Silkscreen: VBE1104N.
Brand: VBsemi.
Parameters: N-channel, 100V, 40A, RDS(ON), 30mΩ@10V, 31mΩ@4.5V, 20Vgs(±V); 1.8Vth(V); TO252.
Package: TO252.
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Detailed parameter description:.
- Model: FDD3672-VB.
- Silkscreen: VBE1104N.
- Brand: VBsemi.
- Channel type: N-channel.
- Maximum withstand voltage: 100V.
- Maximum current: 40A.
- Static on-resistance: 30mΩ @ 10V, 31mΩ @ 4.5V.
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: 1.8V.
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Application profile:.
This FDD3672-VB is an N-channel MOSFET suitable for various electronic modules and applications, especially when high current switching and low on-resistance are required. .
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Application areas:.
This product is usually used in modules in the following areas:.
1. Power supply module: used for power switching and current control. .
2. Motor drive module: In motor control, it can be used for fast switching and regulating motor speed. .
3. Inverter module: used for applications that convert DC to AC, such as solar inverters and electric vehicle drive systems. .
4. LED driver module: control LED brightness and color temperature to achieve energy efficiency optimization. .
5. Electronic switch module: in various switch applications, such as lighting switches, power management switches, etc. .
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The low on-resistance and high current handling capability of this device give it wide application potential in the above-mentioned fields.

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