Product video

Your present location > Home page > Product video
FDD120AN15A0-VB, a N-channel TO252 MOSFET datasheet parameters video explanation
Datasheet下载
立即下载
**VBsemi FDD120AN15A0-VB product detailed parameter description: **.
.
- **Silk screen logo: ** VBE1158N.
- **Brand: ** VBsemi.
- **Package :** TO252.
- **Channel type: ** N—Channel channel.
- **Drain-source voltage (VDS): ** 150V.
- **Drain-source current (ID): ** 25A.
- **On-resistance (RDS(ON) ): ** 70mΩ @ VGS=10V, VGS=20V.
- **Threshold voltage (Vth): ** 2V.
.
**Application introduction: **.
.
VBsemi FDD120AN15A0-VB is a TO252 packaged N-Channel channel field effect transistor (MOSFET), mainly used for Power switching applications. .
.
**Main application areas and modules:**.
.
1. **Power module:** Suitable for DC-DC converters and power switches control etc. .
.
2. **Motor drive module:** Can be used in motor drive module, providing high current and low on-resistance characteristics. .
.
3. **Power switch module:** Plays a key role in high-power power switch module. .
.
**Function:**.
.
- Provide power switch control with high current and low on-resistance. .
- Used to drive and control high-power modules such as power supplies and motors. .
.
**Precautions for use:**.
.
1. **Voltage level:** Use within the specified voltage range and do not exceed the nominal maximum drain of the product -Source voltage. .
.
2. **Current load:** Note that the current load does not exceed the rated current of the product. .
.
3. **Operating temperature:** Use within the specified operating temperature range to avoid over-temperature operation. .
.
The above information is for reference only. When using it, please read the product manual and specifications carefully to ensure correct use and follow the manufacturer's recommendations and precautions.

Sample Req

Online

Telephone

400-655-8788

WeChat

Topping

Sample Req
Online
Telephone
WeChat