Model: CJ2333-VB.
Silk screen: VB2355.
Brand: VBsemi.
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**Detailed parameter description:**.
- Channel type: P channel.
- Rated voltage: -30V.
- Maximum continuous current: -5.6A.
- On-resistance (RDS(ON)): 47mΩ @ 10V, 56mΩ @ 4.5V, 20Vgs.
- Threshold voltage (Vth): -1V.
- Package type: SOT23.
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**Application introduction:**.
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CJ2333-VB is a P-channel MOSFET transistor, Suitable for a variety of applications with negative voltage tolerance and low on-resistance. The following are the applications of this product on modules in different fields: .
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1. **Power management module**: .
The negative voltage tolerance and low on-resistance of CJ2333-VB make it a Ideal for power management modules, especially for negative voltage switching and reverse supply protection. .
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2. **Signal Amplifier**: .
In the amplifier circuit, CJ2333-VB can be used for negative voltage protection and switch control of the signal amplification module to ensure the stability and reliability of the signal amplifier. sex. .
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3. **Battery Management**: .
This MOSFET transistor can be used in the battery management module to control the switch of battery charging and discharging to ensure the safety and effectiveness of the battery. .
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4. **Power supply reverse protection**: .
CJ2333-VB is an ideal power supply reverse protection switch, which can be used in various electronic equipment to prevent incorrect connection of power polarity. This protects the device from damage. .
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5. **Electronic switch**: .
This transistor can be used in various electronic switches, such as electronic locks, switch circuits and electronic controllers to control the on-off state of the circuit. .
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In short, CJ2333-VB is suitable for applications that require negative voltage withstand and switch control, such as modules in the fields of power management, signal amplifiers, battery management, power reverse protection and electronic switches. Its parameters make it ideal in a wide range of electronic equipment to ensure efficient, reliable and stable operation and to protect equipment from undesired voltage conditions.