Model: CHMP830JGP-A-VB.
Silk screen: VBA2317.
Brand: VBsemi.
Parameter description: .
- Polarity: P channel.
- Rated voltage: -30V.
- Maximum continuous drain current: -7A.
- Static drain-source resistance (RDS(ON)): 23mΩ @ 10V, 29mΩ @ 4.5V, 66mΩ @ 2.5V.
- Gate Electrode-source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): -1.37V.
- Package: SOP8.
.
Application introduction: .
CHMP830JGP-A-VB is a P-channel field effect transistor (MOSFET) device with moderate current handling capability and low drain-source resistance. This makes it suitable for a variety of electronic applications. .
.
Application fields: .
1. **Power module**: CHMP830JGP-A-VB can be used for switching power supply, battery protection and power management module, helping to improve power conversion efficiency. .
.
2. **Signal Switch**: This MOSFET device can be used in various signal switching applications, such as low voltage signal switching and circuit protection. .
.
3. **Battery Management**: In portable devices, drones and electric vehicles, CHMP830JGP-A-VB can be used in battery management systems to ensure safe charging, discharging and protection of batteries. .
.
4. **Power Management**: In power management circuits, this MOSFET can be used for power switching and power distribution. .
.
5. **LED Driver**: CHMP830JGP-A-VB can be used for LED driver and lighting control to provide efficient LED lighting. .
.
In short, CHMP830JGP-A-VB is a versatile electronic device suitable for various electronic applications requiring moderate current carrying capacity, low resistance and reliability. It can be used for power management, signal switches, battery management, power management, LED lighting and other modules.