Model: CES2331-VB.
Silkscreen: VB2355.
Brand: VBsemi.
Parameters:.
- P-channel MOSFET.
- Rated voltage: -30V.
- Maximum continuous current: -5.6A.
- Static on-resistance (RDS(ON)): 47mΩ @ 10V, 56mΩ @ 4.5V.
- Gate-source voltage (Vgs): Maximum ±20V.
- Threshold voltage (Vth): -1V.
Package: SOT23.
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Detailed parameter description:.
CES2331-VB is a P-channel MOSFET designed for low voltage and medium current applications. It has a rated voltage of -30V and can continuously withstand a maximum current of -5.6A. This MOSFET has good turn-on characteristics, and its static on-resistance is 47mΩ at 10V and 56mΩ at 4.5V. This makes it suitable for applications that require medium power. .
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CES2331-VB has a wide range of gate-source voltage (Vgs), up to ±20V, and good control characteristics. Its threshold voltage (Vth) is -1V, which can achieve precise control in different applications. .
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Application Introduction: .
CES2331-VB is widely used in the following fields and modules: .
1. **Power Management Module**: This MOSFET is suitable for low-voltage power management and can be used in applications such as battery management, power switching and charging control. .
2. **Signal Amplifier**: Due to its medium current characteristics, it can be used to amplify signals, such as audio amplifiers and signal amplification circuits. .
3. **Power Switch**: Suitable for various types of power switch modules, such as switch mode power supplies (SMPS). .
4. **LED driver**: can be used in LED lighting systems to control LED brightness and switching. .
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In summary, CES2331-VB is a P-channel MOSFET suitable for a variety of applications, suitable for low voltage, medium current applications, providing medium power and reliability solutions.