Model: CES2323-VB.
Silk screen: VB2355.
Brand: VBsemi.
Package: SOT23.
.
**Detailed parameter description:**.
- Architecture: P-Channel MOSFET.
- Voltage level: -30V.
- Current capability: -5.6A (Note: the negative sign here indicates that the current direction is from drain to source).
- RDS(ON): 47mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -1V.
.
**Application introduction:**.
CES2323-VB is a P-Channel MOSFET in SOT23 package, suitable for circuit design in various fields. The following are the fields and modules that this device may be applied to: .
.
1. **Power inverter:** Applicable to power inverter modules, which can provide efficient energy conversion under negative voltage. .
.
2. **Power switch:** Can be used in power switch modules under negative voltage to achieve controllable and adjustable circuits. .
.
3. **Signal amplification:** Applicable to some applications that require negative voltage signal amplification, such as audio amplifiers, etc. .
.
4. **Power protection:** Can be used in power protection modules under negative voltage to ensure that the circuit can work safely under abnormal conditions. .
.
**Precautions for use:**.
- When designing the circuit, make sure to understand and follow the maximum rated voltage and current of the device to prevent device damage. .
- Pay attention to proper heat dissipation measures, especially in high current applications, to ensure that the device is within the normal operating temperature range. .
- Since it is a P-Channel MOSFET, its on-resistance and current direction characteristics are opposite to those of an N-Channel MOSFET. Please take this into consideration in your design.