Model: CEG8205-VB.
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Screen printing: VBC6N2022.
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Brand: VBsemi.
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Package: TSSOP8.
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**Detailed parameters Description: **.
- **Channel Type:** 2 N—Channel.
- **Maximum Drain Current:** 4.8/4.8A (dual Channel).
- **Maximum Drain-Source Voltage:** 20V.
- **On-Resistance:** RDS(ON)=20/22mΩ @ VGS=4.5V, VGS=15V.
- **Gate Threshold Voltage:** Vth=0.6~2V.
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**Application Introduction:**.
CEG8205 -VB is a dual-channel N-Channel field effect transistor with excellent characteristics such as low leakage current, low leakage voltage, and low on-resistance. It adopts TSSOP8 standard package and is suitable for a variety of electronic applications. .
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**Main application field modules:**.
1. **Power switch module:** Due to the dual-channel N-Channel structure of CEG8205-VB, it is suitable for power switch modules to achieve Efficient power control and management. .
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2. **Current control module:** Due to its low leakage current and low on-resistance, it can be used in current control module to ensure precise control of load current. .
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3. **Battery protection module:** Suitable for battery protection circuit, providing effective protection for the battery, especially in dual-channel design. .
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4. **Power inverter module:** Suitable for power inverter module, used to convert DC power to AC power, such as solar inverter. .
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**Precautions for use:**.
- Please use it in accordance with the specifications and application guide provided by the manufacturer, and ensure that the working conditions are within the specified range of the component. .
- Make sure the circuit design is reasonable to prevent overcurrent, overvoltage, etc. from causing damage to the device. .
- Pay attention to proper thermal design, especially in high power applications, to ensure that the device is within the normal operating temperature range. .
- Follow relevant standards for soldering and packaging to ensure reliable connection between the device and the circuit board.