CED12N10 detailed parameter description:.
- Polarity: N channel.
- Rated voltage: 100V.
- Rated current: 15A.
- On-resistance: 115mΩ @ 10V, 120mΩ @ 4.5 V.
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: 1.41Vth (V).
- Package type: TO251.
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Application introduction: .
CED12N10 is an N-channel MOSFET suitable for various power management and power amplifier applications. It has high voltage and current ratings to provide reliable and efficient current switching. .
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By controlling the gate-source voltage of 20Vgs (±V), the switch tube can be turned on and off, and the current can be controlled and the switching state converted. Its lower on-resistance reduces power consumption and increases system efficiency. .
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CED12N10 is packaged in TO251 and is suitable for use in various circuit boards and modules. .
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This device is widely used in power switches, power inverters, motor drivers and other fields. With higher rated voltage and current rating, CED12N10 is particularly suitable for areas requiring high power and high current transmission, such as power switches and power amplifiers. .
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In short, CED12N10 is an N-channel MOSFET, suitable for application modules such as power management and power amplifiers. It is especially suitable for areas requiring high power and high current transmission, such as power switches and power amplifiers. .