Model: AP6679GH.
Silk screen: VBE2309.
Brand: VBsemi.
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Detailed parameter description: .
- Polarity: P channel.
- Rated voltage: -30V .
- Rated current: -60A.
- Turn-on resistance (RDS(ON)): 9mΩ @ 10V, 12mΩ @ 4.5V.
- Rated gate-source voltage (Vgs): 20V ( ±V).
- Threshold voltage (Vth): -1.71V.
- Package type: TO252.
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Application introduction: .
AP6679GH is a P-channel MOSFET, With high current capability and low on-resistance, it is suitable for module applications in various fields. It is highly efficient and can provide efficient power switching and current control. .
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Main application areas: .
1. Power module: AP6679GH can be used in power module applications such as switching power supplies, DC-DC converters and inverters. Its high current capability and low on-resistance help provide stable voltage output and efficient power transfer. .
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2. Electric vehicles: Because AP6679GH has high current capability and wide operating voltage range, it can be applied to power management and current control modules in electric vehicles. Its low on-resistance can reduce power loss and improve energy efficiency. .
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3. Industrial automation: In the field of industrial automation, AP6679GH can be used in applications such as motor control, sensor interfaces and data acquisition modules. Its high current capability and low on-resistance provide stable signal processing and precise control functions. .
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4. Automotive electronic module: AP6679GH can be used in drive control and power management modules in automotive electronic modules. Its high current capability and low on-resistance ensure reliability and high performance of automotive systems. .
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In summary, AP6679GH is suitable for module applications in the fields of power modules, electric vehicles, industrial automation and automotive electronic modules. It has high current capability, low on-resistance and stable performance characteristics to meet a variety of application needs.