Model: AP6679GH-HF-VB.
Silk screen: VBE2309.
Brand: VBsemi.
Parameter description: .
- Channel type: P channel.
- Rated voltage: -30V .
- Maximum current: -60A.
- Static drain-source resistance (RDS(ON)): 9mΩ@10V, 12mΩ@4.5V.
- Gate-source voltage (±Vgs) : 20V.
- Gate-source threshold voltage (Vth): -1.71V.
- Package type: TO252.
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Application introduction: .
AP6679GH-HF-VB is a A P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with negative voltage tolerance and low drain-source resistance. These characteristics make it widely used in modules in various electronic fields. .
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Application fields: .
1. Power module: AP6679GH-HF-VB can be used in power switch module to provide efficient power switching function and voltage regulation, suitable for various electronic equipment and power supplies system. .
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2. Current control: In the current control module, it can be used for current switching and control, suitable for motor control, power management and current protection. .
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3. Amplification and signal switching: In the amplification and signal switching module, AP6679GH-HF-VB can be used for signal amplification and switching functions, suitable for applications such as audio amplifiers, communication interfaces, and sensor interfaces. .
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4. Inverter: It can also be used in inverter circuits to convert DC power to AC power, suitable for solar inverters, electric vehicle inverters and UPS systems. .
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In short, AP6679GH-HF-VB is a multi-functional P-channel MOSFET, suitable for electronic modules in many fields, providing power management, current control, signal amplification and inverter functions.