Model: 2SJ518-VB.
Silkscreen: VBI2658.
Brand: VBsemi.
Parameters:.
- P-channel.
- Rated voltage: -60V.
- Maximum current: -5A.
- On-resistance (RDS(ON)): 58mΩ @ 10V, 70mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 1~3V.
- Package: SOT89-3.
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Application Introduction:.
2SJ518-VB is a P-channel MOSFET suitable for negative voltage applications with low on-resistance and moderate current-voltage characteristics. This MOSFET is suitable for applications requiring negative voltage switching and control. .
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Main features and application areas: .
1. **Power inverter**: 2SJ518-VB can be used in power inverter to convert positive voltage to negative voltage, suitable for some special applications such as negative voltage power supply system. .
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2. **Current control**: This MOSFET can be used for negative current control, such as current source, current controller and current amplifier, for precise current regulation. .
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3. **Negative polarity power management**: In special applications, negative polarity power management is required, 2SJ518-VB can be used to implement power switching and control. .
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4. **Battery protection**: In mobile devices and battery-powered systems, this MOSFET can be used in battery protection circuits to ensure safety and stability during battery charging and discharging. .
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5. **Negative voltage power regulator**: 2SJ518-VB can be used in negative voltage power regulators to adjust the current and voltage of the load. .
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In conclusion, 2SJ518-VB is suitable for multiple fields, including power inverter, current control, negative polarity power management, battery protection and negative voltage power regulator modules. Its P-channel characteristics and low on-resistance make it an ideal choice for handling negative voltage applications.