Model: 2SJ485-VB.
Silkscreen: VBE2610N.
Brand: VBsemi.
Parameter Description:.
- Channel type: P-channel.
- Rated voltage: -60V.
- Maximum current: -38A.
- Static drain-source resistance (RDS(ON)): 61mΩ@10V, 72mΩ@4.5V.
- Gate-source voltage (±Vgs): 20V.
- Gate-source threshold voltage (Vth): -1.3V.
- Package type: TO252.
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Application Introduction:.
2SJ485-VB is a P-channel metal oxide semiconductor field effect transistor (MOSFET) with high voltage and current handling capabilities, low drain-source resistance and stable gate-source threshold voltage. These characteristics make it widely used in modules in various electronic fields. .
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Application fields: .
1. Power module: 2SJ485-VB can be used in medium to high power power switch modules to provide power conversion and voltage regulation functions. Suitable for various electronic devices, communication equipment and industrial equipment. .
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2. Motor control: In the motor control module, it can be used for motor drive and current control, suitable for electric vehicles, robots and industrial automation. .
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3. Power inverter: It can also be used in inverter circuits to convert DC power to AC power, suitable for solar inverters, electric vehicle inverters and UPS systems. .
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4. High current switch: 2SJ485-VB can be used in high current switch modules such as power distribution, current protection and switch control. .
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In short, 2SJ485-VB is a high-performance P-channel MOSFET suitable for electronic modules in multiple fields, providing power management, current control, signal amplification and inversion functions.