**Product model:** 2SJ377-VB .
**Silk screen:** VBE2610N .
**Brand:** VBsemi .
**Parameters:**.
- Package: TO252.
- Type: P—Channel channel.
- Rated voltage: -60V.
- Rated current: -38A.
- On-state resistance (RDS(ON)): 61mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -1.3V .
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**Package:** TO252 .
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**Detailed parameter description and application introduction:**.
This device is a P-Channel channel field effect transistor in TO252 package, suitable for a variety of application scenarios. The main parameters include negative voltage rating, high current rating, and low on-state resistance, which enable it to have good performance under different power supply and load conditions. .
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**Application areas:**.
1. **Power switch module:** Due to its negative voltage and high current rating, it can be used for switching power supply and voltage regulation in power switch modules. .
2. **Motor drive module:** Suitable for motor drive modules of industrial motors and electric vehicles, providing reliable high current drive. .
3. **Power amplifier module:** In scenarios where high power amplification is required, it can be used in power amplifier modules to amplify signals. .
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**Function:**.
- **Power switch module:** Used for switching power supply and voltage regulation to achieve high-efficiency conversion of power supply. .
- **Motor drive module:** Provides reliable current drive to control the operation of industrial motors and electric vehicles. .
- **Power amplifier module:** As part of power amplification, it achieves high power amplification of signals. .
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**Notes on use:**.
1. Please operate in accordance with the maximum ratings provided in the data sheet to ensure the reliability and stability of the device. .
2. Consider heat dissipation requirements in the design, especially in high current and high power applications. .
3. Make sure to use it within the threshold voltage range to ensure normal operation. .
4. Avoid exceeding the rated voltage and current to avoid damaging the device.