**Product model:** 12P10-VB .
**Silk screen:** VBE2102M .
**Brand:** VBsemi .
**Parameters:**.
- Package: TO252 .
- Type: P—Channel .
- Rated voltage: -100V.
- Rated current: -10A.
- On-state resistance (RDS(ON)): 188mΩ @ VGS =10V, VGS=20V.
- Threshold voltage (Vth): -1.77V .
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**Package:** TO252 .
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**Detailed parameter description and application Introduction:**.
This device is a TO252 packaged P-Channel field effect transistor, suitable for a variety of application scenarios. Key parameters include negative voltage rating, low on-state resistance, and moderate threshold voltage, allowing for good performance under varying power and load conditions. .
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**Application Areas:**.
1. **Power Module:** Due to its negative voltage rating, it can be used in switching power supplies and inverters in power modules. .
2. **Drive module:** Suitable for various load drive modules, such as motor drive and lighting control. .
3. **Load switch module:** Provides high-efficiency power switches in scenarios where load switches are required. .
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**Function:**.
- **Power module:** Used for switching power supply and inverter to achieve high-efficiency conversion of power supply. .
- **Drive module:** Provides reliable current drive to control external loads. .
- **Load switch module:** As part of the load switch, it ensures reliable switching and control of the load. .
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**Usage Precautions:**.
1. Please operate in accordance with the maximum ratings provided in the data sheet to ensure the reliability and stability of the device. .
2. Consider heat dissipation needs in the design, especially in high current and high power applications. .
3. Make sure to use it within the appropriate voltage range below the threshold voltage (Vth) to ensure normal operation. .
4. Avoid exceeding the rated voltage and current to avoid damaging the device.