Solar FAQ

    1) Why choose VBsemi VBGQA1103 in a photovoltaic DC-DC boost module?

    A: Because VBsemi VBGQA1103 has an extremely low on-resistance (3.45 mOhm) and a high current capability (135 A), which significantly improves conversion efficiency. The company also has a mature and stable solution, with a defect rate consistently below 0.03%, ensuring high reliability and a long service life.

    2) How does the VBsemi inverter power module VBL165R36S solve EMC problems?

    A: VBL165R36S effectively improves electromagnetic compatibility (EMC) and reduces system interference by lowering the switching voltage and optimising the design. Combined with VBsemi's mature technology and a low defect rate (below 0.03%), it keeps the inverter running stably.

    3) How is the quality of VBsemi MOSFETs guaranteed in photovoltaic applications?

    A: All VBsemi products such as VBGQA1103 and VBL165R36S are produced on the basis of a mature solution, with a defect rate consistently controlled below 0.03%. They come with strict quality testing and reliability support, making them suitable for photovoltaic systems that demand high stability.

VBsemi in Photovoltaic Application Scenarios

    1) Which photovoltaic DC-DC boost scenarios is VBsemi VBGQA1103 suitable for?

    A: VBGQA1103 is designed specifically for photovoltaic DC-DC boost modules. Its compact structure and high power density suit space-constrained applications such as solar charge controllers and micro-inverters, efficiently handling high current (135 A) and 100 V.

    2) In industrial inverters, which scenarios is VBsemi VBL165R36S recommended for?

    A: VBL165R36S is suitable for industrial power conversion scenarios such as solar inverters and UPS. Its 650 V withstand voltage and low on-resistance (75 mOhm) reduce switching losses, improve EMC and raise overall system efficiency.

    3) What are the typical applications of VBsemi MOSFETs in the new energy field?

    A: VBsemi VBGQA1103 and VBL165R36S are widely used in photovoltaic power generation and inverter systems, for example solar power plants and energy storage equipment. They provide high power density and reliable performance in support of renewable energy development.

 VBsemi MOSFET Replacements in Modules

    1) Which DC-DC boost module MOSFETs can VBsemi VBGQA1103 replace?

    A: VBGQA1103 can replace other 100 V MOSFETs. Thanks to its ultra-low on-resistance (3.45 mOhm) and high current (135 A), it offers better power density and efficiency in a DFN8 package, making it an ideal choice for compact boost modules.

    2) In inverter applications, what replacement advantages does VBsemi VBL165R36S have over competing products?

    A: With 650 V withstand voltage, 75 mOhm on-resistance and improved EMC, VBL165R36S can replace conventional SJ MOSFETs, delivering lower switching losses and higher reliability. Its defect rate is only below 0.03%, ensuring stable long-term operation.

    3) Why are VBsemi products a reliable replacement for power modules?

    A: Products such as VBGQA1103 and VBL165R36S benefit from mature technology and a low defect rate, with parameters superior to many competing products (low on-resistance and high current). They can be seamlessly substituted in photovoltaic and inverter applications, cutting cost while improving performance. 

          PS: We have already established long-term partnerships with many well-known manufacturers; please refer to the Partners section on our homepage. For further details, please contact us through the enquiry panel on the right.

Key Parameters at a Glance

    1) What are the parameter advantages of VBsemi VBGQA1103 in DC-DC boost modules?

    A: VBGQA1103 has an on-resistance of only 3.45 mOhm and supports 100 V and 135 A. Combined with a compact DFN8 package it achieves high power density and significantly reduces energy loss, making it suitable for efficient photovoltaic conversion.

    2) What are the key parameter highlights of VBsemi VBL165R36S in inverter modules?

    A: VBL165R36S offers 650 V withstand voltage, 75 mOhm on-resistance and 36 A current. It uses SJ_Multi-EPI technology, which lowers the switching voltage, improves EMC and raises the overall efficiency and reliability of the inverter.

    3) How do the packages and parameters of VBsemi MOSFETs support high-power applications?

    A: Both the DFN8 (5X6) package of VBGQA1103 and the TO263 package of VBL165R36S provide low on-resistance and high current capability while enabling miniaturised designs. The defect rate is as low as 0.03%, ensuring high power density and stability in photovoltaic and inverter systems.