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发展历程
发展历程
2003 year
Company established
2011 year
Capable of fully manufacturing planar and trench MOSFETs
2015 year
Completed R&D and mass production of superjunction MOSFETs
2017 year
Completed IGBT production process and entered mass production
2020 year
Certified as a national high-tech enterprise
2022 year
Completed SiC MOSFET production process and entered mass production
2024 year
Launched new high-power SGT MOS and started mass production
2026 year
Completed R&D and mass production of GaN HEMT power devices
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